Discovery of scaling effect ReRAM, a promising energy-efficient nonvolatile memory
Under the leadership of YANAGIDA Takeshi , Associate Professor, NAGASHIMA Kazuki , Specially Appointed Assistant Professor, and KAWAI Tomoji , Specially Appointed Professor at the Institute of Scientific and Industrial Research , Osaka University , a group of researchers has discovered a scaling effect in the emergence of electrical polarity in resistance random access memory (ReRAM), a promising next-generation high-density non-volatile memory. This group revealed an intrinsic difference between unipolar switching and bipolar switching in area dependence, which causes a diversity of electrical polarity in various resistive switching devices with different geometries. This principle was clarified for the first time by using self-organized 10 nm nanowire memory devices.
This group's achievement has enabled the design of more reliable memristor (ReRAM) devices the development of which has become a race throughout the world. It will also have a great impact on the development of energy-saving technologies and green nanotechnologies making use of such for more powerful efficient non-volatile memory devices.
Abstract
Electrically driven resistance change in metal oxides opens up an interdisciplinary research field for next-generation non-volatile memory. Resistive switching exhibits an electrical polarity dependent “bipolar-switching” and a polarity independent “unipolar-switching”, however tailoring the electrical polarity has been a challenging issue. Here we demonstrate a scaling effect on the emergence of the electrical polarity by examining the resistive switching behaviors of Pt/oxide/Pt junctions over 8 orders of magnitudes in the areas. We show that the emergence of two electrical polarities can be categorized as a diagram of an electric field and a cell area. This trend is qualitatively common for various oxides including NiOx, CoOx, and TiO2-x. We reveal the intrinsic difference between unipolar switching and bipolar switching on the area dependence, which causes a diversity of an electrical polarity for various resistive switching devices with different geometries. This will provide a foundation for tailoring resistive switching behaviors of metal oxides.
To learn more about this research, please read the full research report entitled " Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides " at this page of the Scientific Reports website.
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