Researchers from Osaka University, in collaboration with Nippo Precision Co., Ltd., developed a high-precision terahertz (THz) time-domain ellipsometry system that is effective in the noninvasive characterization of high carrier concentrations up to about 10^20–10^21 cm^-3 useful in the evaluation of GaN and other semiconductors such as SiC and Ga2O3.

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2021-09-15

natural_sciences

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['ile']

['Makoto Nakajima', 'Verdad C. Agulto', 'Valynn Katrine Mag-usara', 'Masashi Yoshimura', 'Yusuke Mori', 'Masayuki Imanishi']